2010 - 2009 - 2008 - 2007 - 2006 - 2005 - 2004 - 2003 - 2002 - 2001 - 2000 - 1999 - 1998
Deployment of Plasma Parameters for FDC in Metal EtchTechnology
Improvement and Fault Detection @ TCP Etch Chamber and a Dual Frequency
Oxide Etch Chamber
R. Benson, et.al., Micron Technology, Inc
8 th European AEC/APC Conference, April, 2007,
Dresden, Germany
Requirements
on Sensors for new Plasma Tools
M. Klick, et.al. Plasmetrex GmbH
8 th European AEC/APC Conference, April, 2007,
Dresden, Germany
The
Integration of add-on Sensors into the Manufacturing Tool Environment -
recent Models and future Ne
eds
Oxide Etch Chamber
D. Suchland, Advanced Semiconductor Instruments GmbH
7 th European AEC/APC Conference,
March, 2006,
Aix-en-Provence, France
Process
Development and Control for Silicon Trench Etching using Plasma
Parameters
F. Session, Fairchild Semiconductor, M. Klick, M. Bernt, Advanced
Semiconductor Instruments GmbH
7 th European AEC/APC Conference,
March, 2006,
Aix-en-Provence, France
Electron heating in capacitively coupled
discharges and reactive gases
G. Franz, et al. – Munich University of Applied Sciences
J.VAC.SCI.TECHNOL.B23(4)2005,917
Please contact us via mail in case of interest.
Application of in-situ Plasma Measurement Techniques on Etch Hardware
Desgn and Process Development for 60 nm Structures
A. Steinbach, et al. – Infineon Technologies Dresden
6th European AEC/APC Conference, April, 6, 2005,
Dublin, Irland
Economical benefits by new plasma tool concepts and AEC/APC
L. Eichhorn, et al. – ASI Advanced Semiconductor Instruments
GmbH
6th European AEC/APC Conference, April, 6, 2005,
Dublin, Irland
Electron Heating and Process Characterization in Reactive Low-pressure
Plasmas
G. Franz, et al. – Munich University of Applied Sciences
6th European AEC/APC Conference, April, 6, 2005,
Dublin, Irland
Systematic
Method to Optimize Conditioning
Process through Real Time Plasma Monitoring
K. H. Baek, et al.
– SAMSUNG ELECTRONICS Co., LTD.,
International Symposium on Semiconductor
Manufacturing, Paris, 2005
ISSM 2005, Volume , Issue , 13-15 Sept. 2005 Page(s): 129 - 131
Please contact us via mail in case of interest.
Chamber mainteanance and fault detection
technique for a gate etch process via self-excited electron resonance
spectroscopy
K. H. Baek, et al.
– SAMSUNG ELECTRONICS Co., LTD.,
J.VAC.SCI.TECHNOL.B23(1)2005,126
Please contact us via mail in case of interest.
Enhanced Chamber Management and Fault Detection in Plasma Etch
Processes via SEERS
K. H. Baek – SAMSUNG ELECTRONICS Co., LTD.
International Sematech AEC/APC Symposium XVI 2004, USA
Implementation of in-situ Measurement Techniques for Plasma Processing
A. Steinbach – Infineon Technologies Dresden
5th European AEC/APC Conference, April, 13,
2004, Dresden, Germany
Sensor Interface based on Ethernet/IP as Network Communication Standard
SEMI E54.13
D. Suchland – ASI Advanced Semiconductor Instruments GmbH
5th European AEC/APC Conference, April, 13,
2004, Dresden, Germany
Wet Clean and Maintenance Monitoring of Plasma Etch Tools by Plasma
Parameter Measurement
R. M. Wolf, et al. – Infineon Technologies Dresden
5th European AEC/APC Conference, April, 13,
2004, Dresden, Germany
Analysis of Capacitively Coupled Chlorine - Containing Discharges
G. Franz – University of Applied Sciences, Munich
5th European AEC/APC Conference, April, 13,
2004, Dresden, Germany
The Application of Plasma Parameters for Process Control: Multi Plasma
Regime
M. Klick– ASI Advanced Semiconductor Instruments GmbH, Berlin
5th European AEC/APC Conference, April, 13,
2004, Dresden, Germany
Process Characterization Improvement by Plasma Parameters at
TEL´s 300 mm SCCM Etch Chamber
K. Allan, et al. – Infineon Technologies Dresden
5th European AEC/APC Conference, April, 13,
2004, Dresden, Germany
Monitoring of Process Stability and Chamber Matching by Plasma
Parameter Measurement using High Speed-SEERS
A. Steinbach, S. Barth – Infineon Technologies Dresden
4nd European AEC/APC Conference , March,
26–28, 2003, Grenoble, France
LAM® TCP® 9400 PTX Silicon
Trench Etch Process Monitoring for Fault Detection and Classification
T. Pardue, M. Klick – Fairchild Semiconductor, ASI Advanced
Semiconductor Instruments GmbH
AEC/APC Symposium XIV, September, 7–12, 2002, Utah, USA
Plasma Monitoring under Industrial Conditions for Semiconductor
Technologies
M. Klick – ASI Advanced Semiconductor Instruments GmbH
ESCAMPIG 16, ICRP5, I-375, July, 14–18, 2002, Grenoble,
France
Application of Self Excited Electron Plasma Resonance Spectroscopy for
Advanced Process Control of Plasma Etch Process
A. Steinbach – Infineon Technologies Dresden
ISSM International Symposium on Semiconductor Manufacturing, October,
15–17, 2002, Japan
Importance of in-situ Measurement Techniques for Advanced Process
Control of Plasma Processing in High Volume Production
A. Steinbach – Infineon Technologies Dresden
3rd European AEC/APC Conference, April,
10–12, 2002, Dresden
Application of Plasma Parameter Measurement by SEERS on Oxide Etch
Process Development for New DRAM Shrink Generations in APPLIED MATERIALS ® EMAX™
Chamber
M. Hartenberger (University of Cottbus), P. Moll, A. Steinbach
(Infineon Technologies Dresden)
3rd European AEC/APC Conference , April,
10–12, 2002, Dresden
Tool-
and Process Comparison of 200 mm- and 300 mm-Si Plasma Etch Processes
by Optical Emission Spectroscopy and Self Excited Electron Plasma
Resonance Spectroscopy
S. Bernhard, A. Steinbach (Infineon Technologies Dresden)
3rd European AEC/APC Conference, April,
10–12, 2002, Dresden
Application
of Plasma Parameter Measurement using SEERS on increase of Mean Time
Between Cleans at Collar Etch in APPLIED MATERIALS® MxP+™
M. Hartenberger (University of Cottbus), F. Hoffmann, S.
Bernhard, A. Steinbach (Infineon Technologies Dresden)
3rd European AEC/APC Conference, April,
10–12, 2002, Dresden
Long-term Stability and FDC of Plasma Parameters for Trench Si Etching
Using Lam® TCP® 9400 PTXT.
Pardue (Fairchild Semiconductor), M. Klick (ASI GmbH)
3rd European AEC/APC Conference, April,
10–12, 2002, Dresden
The tremendous Impact of APC for Plasma Etch - Advanced Process Control
V. Tegeder – Infineon Technologies SC300, Dresden, Germany,
R. Ronchi, STMicroelectronics, Rousset, France,
S. Mueller, M. Hofmann, AMD Saxony, Dresden
Solid State Technology, October, 2001
Application
of SEERS to real time Plasma Monitoring in Production at differrent FABs
V. Tegeder – Infineon Technologies Dresden
Sematech AEC/APC Symposium XIII, 2001, USA
Application
of Electrical Plasma Measurement Techniques at Advanced
Process Control
A. Steinbach – Infineon Technologies Dresden
2nd European AEC/APC Conference, April,
18–20, 2001, Dresden
Application
of Plasma Parameters to characterize Product Interactions between DRAM
and Logic Products at Gate Contact (GC) Stack Etch in LAM® TCP®
T. Dittkrist – University of Technology Dresden, et al.
2nd European AEC/APC Conference, April,
18–20, 2001, Dresden
Arcing Prevention by Dry Clean Optimization at Shallow Trench Isolation
(STI) Etch in APPLIED MATERIALS®MxP™
by Use of Plasma Parameters
M. Hartenberger – University of Cottbus, et al.
2nd European AEC/APC Conference, April,
18–20, 2001, Dresden
Application
of Advanced Data Processing Techniques for Single Process Parameters
and Electrical Data for Product Engineering Purposes
U. Nehring – Infineon Technologies Dresden, et al.
2nd European AEC/APC Conference, April,
18–20, 2001, Dresden
Supervision
of Plasma-Etch-Processes at different Tool Types
V. Tegeder – Infineon Technologies Dresden
Sematech AEC/APC Symposium XII, 2000, USA
Use
od Data Mining for Model Based Data Analysis of Plasma Parameters and
Electrical Data in High Volume DRAM Production
U. Nehring – Infineon Technologies Dresden
Sematech AEC/APC Symposium XII, 2000, USA
Plasma Monitoring System HERCULES®
for real time plasma etch control
A. Steinbach – Infineon Technologies Dresden
Sematech AEC/APC Symposium XI 1999, USA
Real
Time Plasma Etch Control by means of Physical Plasma Parameters with
HERCULES®
A. Steinbach –Infineon Technologies Dresden, et al.
Proc. of the Symposium on Microelectronic Manufacturing Technologies,
Edinburgh, May 19–21, 1999, United Kingdom
SEERS-based process control and plasma etching
S. Wurm, Siemens AG Semiconductors, Muenchen, Germany, W. Preis,
Siemens AG Semiconductors, Regensburg, Germany, M. Klick, ASI GmbH,
Berlin, Germany
Solid State Technology, 1999, June, p. 103
Plasma Etch Control by means of Physical Plasma Parameter Measurement
with HERCULES®
A. Steinbach – Infineon Technologies Dresden, et al.
Sematech AEC/APC Symposium X 1998, USA
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