ROBUST SENSOR for MANUFACTURING CONTROL

Product:

• Hercules^® C 500 (10 - 35 MHz)
• Hercules^® C 1000 (10 - 70 MHz)
  no DC bias or RF peak voltage measurement point required.

Application:

• Routine manufacturing control
• Quality control
• Product monitoring
• Maintenance
• Chamber matching
• Conditioning (Seasoning) control

Parameters:

• Electron collision rate as effective collision rate for momentum transfer
  including stochastic heating
• Electron density is calculated by a complete model with a reduced model
  with given (predetermined) sheath thickness. Systematic deviations are possible,
  the repeatability is not concerned.
• Plasma bulk resistance
• RF current (1st harmonic)
• RF peak voltage estimated form a given sheath width

Pre-conditions:

• Cylindrical chamber geometry
• Flange above wafer in process position, not in shadow of other parts
• Well grounded chamber wall and liner
• For full performance: RF peak voltage value for ECS; otherwise DC bias for
  anodized chamber surface

Etch and CVD:

• Please see REFERENCES/Tool and Process.

Model:

• Non-iterative SEERS algorithm

Pressure range:

• Depends on gas, reactor geometry, and RF power
• Upper limit: typical 35 Pa (260 mTorr), 50 Pa (380 mTorr) for the most electropositive gases

Flexible and small:

• 4.5 kg
• H: 210 mm, D: 250 mm, W: 210 mm
• 19" rack compatible

Automatic data
aquisition:

• Hercules^® Master
  GUI (Graphical User Interface) for Configuration of Hercules^® and data visualization
• HercView
• HercLotView

Download of specification
Hercules^® C 500 / 1000: