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NEW: LARGE AREA UNIFORMITY SIMULATION for a-Si LAYER THICKNESS, please see Large Area Uniformity Simulation
 
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2010 © Plasmetrex GmbH

HERCULES® N 60 for PECVD

Thin film processing, as hydrogenated amorphous silicon (α-Si:H), silicium nitride (Si3N4), and silicium oxide (SiO2) is very sensitive to temperature, chamber clean, and seasoning.
The plasma physical model utilized in the Hercules® N series involves
  • process gas temperature,
  • idle time effects, and
  • non-uniformity of plasma.
 Layer characteristics of plasma deposition process

Cell efficiency and yield:


Process Issuses:

Sensitive parameter:
Chamber Matching → Yield
  • RF matching losses
  • Generator frequency instabilities
  • RF current
  • RF frequency
Broken lift pins → Yield
  • RF current
Layer structure and uniformity → Product Quality
  • Idle time
  • Panel move-in temperature
  • Interior chamber temperature
  • Seasoning
  • Ion sheath ratio
  • Collision rate
  • Ion sheath ratio
  • Collision rate
Deposition rate → Product Quality
  • Gas and panel temperature
  • Collision rate
Process stability → Yield
  • Real RF power
  • Clean and seasoning
  • RF current
  • Collision rate

Product:
Hercules® N 60 (13.56 MHz)
Hercules N60

Applications:
  • Quality Management, 
  • Fault Detection and Classification, 
  • Maintenance 
  • Process development

Model:
  • NEED (Non-linear Extended Electron Dynamics) algorithm

Pressure range:
  • Lower limit: 50 Pa (37 mTorr)
  • Upper limit: 1 kPa (7.5 Torr)

Chamber setup:
  • 13.56 MHz; capacitive coupling; small gap and large area
  • other frequencies on request

Subject to technical alternations!