HERCULES®
PMX 500/1000
SMART
SENSOR for
PROCESS DEVELOPMENT and TRANSFER
|
Download of specification:

|
Etch Profile Prediction by
Knowing the Plasma physical Background

|
Product:
|
- Hercules® PMX 500 (10 -
35 MHz)
- Hercules® PMX 1000 (10 -
70 MHz)
includes also DC bias or RF peak voltage measurement point for SEERS
model.
|
Applications:
|
- Process development and
transfer
- Based on the RF peak or DC Bias voltage, Hercules® PMX
includes an extended model and allows parameters studies (power and
pressure series).
|
Parameters:
|
- Electron
collision rate as effective collision rate for momentum
transfer including stochastic heating
- Electron
density is calculated by a complete model with
self-consistent sheath thickness. RF peak voltage or DC bias
measurement point at the matchbox or chamber is necessary. Without peak
or DC bias voltage or if there are two power couplings, the model uses
a given (predeterminated) sheath thickness (see Hercules® conifiguration
file). Systematic reproducible deviations are possible, the
repeatability is not concerned.
- Plasma bulk
resistance
- Sheath
width
- RF
current (1st harmonic)
- RF Peak
voltage measurement (measurement point at matchbox
necessary)
|
Measurement range:
|
- Electron density:
109 - 1011 cm-3
- Electron collision rate: 107
- 5 109 s-1
|
Pressure range:
|
- Depends on gas, reactor geometry, and RF power
- Upper limit: typical 35 Pa (260 mTorr), 50
Pa (380 mTorr) for the most electropositive gases
|
Pre-conditions:
|
- Cylindrical chamber geometry
- Flange above wafer in process position, not in shadow
of other parts
- Well grounded chamber wall and liner
- For full performance: RF peak voltage value for ECS;
otherwise DC bias for
anodized chamber surface
|
Etch and CVD:
|
|
Model:
|
|
Flexible
and small:
|
- 6.3 kg
- H: 210 mm, D: 250 mm, W: 280 mm
- 19" rack compatible
|
Data
analysis and process control:
|
|
Interface:
|
- Modbus® TCP
- Lam® Plug and Play
(optional)
- SECS/HSMS (optional via Hercules®
Master)
|
TOOLweb®:
(MKS BlueBox)
|
|
|