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2011 (c) Plasmetrex GmbH

PLASMA SCHOOL FOR SEMICONDUTOR MANUFACTURING

This course provides knowledge on plasma principles and capability of semiconductor manufacturing technologies.

Location: Courses at the Customer Site 

  • 10 - 20 participants
  • Courses on demand
  • Technican and engineer courses

Location: Courses in Berlin

  • RF Technology for Plasma Applications
  • Plasma School for Semiconductor Manufacturing
Spring 2012

 Plasma School for Semiconductor Manufacturing

Duration:

  • RF Technology for Plasma Applications: 8 hours
  • Plasma School for Semiconductor Manufacturing 
    • Plasma Physics Fundamentals: 8 hours
    • Equipment
      • Plasma Etch Tools: 4 hours 
      • Plasma Deposition Tools: 3 hours
    • Process Fundamentals: 2 hours
    • Process and Equipment Interaction
      • E-Chuck: 2 hours
      • Arcing: 3 hours
      • Conditioning: 3 hours
      • Plasma Nitridation of Ultra Thin SiO2 Films: 4 hours

The course includes:

MODULE: PLASMA PHYSICS FUNDAMENTALS
Plasma Physics Fundamentals
  • Elementary plasma physics
  • DC discharge
  • RF discharge
  • CCP - Capacitively Coupled Plasma
  • ICP / TCP® - Inductively Coupled Plasma
  • Electron Cyclotron Resonance
  • NLD - Neutral Loop Discharge
  • Remote and pulsed plasmas
  • RF power in plasma
  • Plasma process control in Fab
  • Methods of plasma diagnostics
 Example: Plasma Physics Fundamentals

MODULE: EQUIPMENT
Plasma Etch Tools

Plasma Etch Tools

  • The plasma process, reactor types
  • Capacitively Coupled Plasma
  • MERIE reactors
  • Dual frequency reactors
  • Inductively Coupled Plasma ( ICP / TCP®)
  • Comparison of chamber types
  • Etch chemistry
 Example: Plasma Etch Tools



Plasma Deposition Tools

Plasma Deposition Tools

  • Sputtering cleaning
  • Sputter deposition
  • Plasma Enhanced Vapor Deposition
  • Nitridation (summary)
 Example: Plasma Deposition Tools

MODULE: PROCESS FUNDAMENTALS
Plasma Processes
 
  • Basics of plasma processing
  • Physical etching (Sputtering)
  • Etching: Chemistry, selectivity, and profiles
  • Limitations of plasma processes
  • Deposition
  • Chamber design
  • Preprocess faults
  • Cost control by quality and process management
 Process Fundamentals

MODULE: PROCESS and EQUIPMENT INTERACTION
Conditioning and Chamber Matching

Conditioning and Chamber Matching

  • Motivation
  • Gas heating
  • Memory effects at chamber wall
  • Conditioning
  • Chamber matching
 Example: Conditiong and Chamber Matching



Wafer Damaging, E-Chuck, and Arcing

Wafer Damaging, E-Chuck, and Arcing

  • Wafer Charging and Arcing
  • The ElectroStatic Chuck
  • Thermal Conductivity in Thin Gases
  • ESC and Etch Process
  • Chamber Arcing and Particles
  • Specific Problems of Dielectric Wafers
 Example: Wafer Damaging, E-chuck, and Arcing



Plasma Nitridation

Plasma Nitridation of ultra thin SIO2 Films

  • RF Plasma
  • Remote Plasma and pulsed RF Plasma
  • Nitridation
Example: Plasma Nitridation