MODULE:
PLASMA PHYSICS FUNDAMENTALS
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- Elementary plasma
physics
- DC discharge
- RF discharge
- CCP - Capacitively Coupled Plasma
- ICP / TCP® -
Inductively Coupled Plasma
- Electron Cyclotron Resonance
- NLD - Neutral Loop Discharge
- Remote and pulsed plasmas
- RF power in plasma
- Plasma process control in Fab
- Methods of plasma diagnostics
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MODULE:
EQUIPMENT
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Plasma
Etch Tools
- The plasma process, reactor
types
- Capacitively Coupled Plasma
- MERIE reactors
- Dual frequency reactors
- Inductively Coupled Plasma ( ICP / TCP®)
- Comparison of chamber types
- Etch chemistry
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Plasma
Deposition Tools
- Sputtering cleaning
- Sputter deposition
- Plasma Enhanced Vapor Deposition
- Nitridation (summary)
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MODULE:
PROCESS FUNDAMENTALS
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- Basics
of plasma processing
- Physical etching (Sputtering)
- Etching: Chemistry, selectivity, and profiles
- Limitations of plasma processes
- Deposition
- Chamber design
- Preprocess faults
- Cost control by quality and process management
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MODULE:
PROCESS and EQUIPMENT INTERACTION
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Conditioning and Chamber Matching
- Motivation
- Gas heating
- Memory effects at chamber wall
- Conditioning
- Chamber matching
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Wafer Damaging, E-Chuck, and Arcing
- Wafer Charging and Arcing
- The ElectroStatic
Chuck
- Thermal
Conductivity in Thin Gases
- ESC
and Etch
Process
- Chamber Arcing
and
Particles
- Specific
Problems
of Dielectric Wafers
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Plasma Nitridation of ultra thin SIO2
Films
- RF Plasma
- Remote Plasma and pulsed RF Plasma
- Nitridation
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