RF CHAMBER MATCHING

  RF Chamber Matching of ICP Chambers

• The phase angle between RF bias and ICP is not well defined and controls the ion energy and so etch rate and wafer damaging.
• This process issue is addressed by a RF measurement kit which provides:
• RF peak voltage at ESC (RF bias voltage)
• RF peak voltage at the 'hot' end of the coil (up to some kV).
• Additionally phase angle between ICP and RF bias voltage.

• Development of special measurement adapters. For chambers with C-connector (Trikon^®, Aviza^®) already available.

  RF Matchbox parameters

• By means of a Plasmetrex in-house solution, we are able to determine the elements of an equivalent circuit of the RF sub-system, in particular the
  matchbox. This allows easy fault detection by tool parameters as well as a power loss characterisation for RF chamber matching.

• So defective spare parts can be found without sending the matchboxes to repair. Chamber can be readily matched and kept stable on long term.

  Actions

• Reengineering measures at customer site for maximum chamber matching

• Calibration of peak voltage measurement point (CCP and ICP)
• Check of matchbox parts
• Identification of defective RF spare parts (C, L, connectors, housing)